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VP0300L/LS, VQ2001J/P
Vishay Siliconix
P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VP0300L VP0300LS VQ2001J VQ2001P -30
V(BR)DSS Min (V)
rDS(on) Max (W)
2.5 @ VGS = -12 V 2.5 @ VGS = -12 V 2 @ VGS = -12 V 2 @ VGS = -12 V
VGS(th) (V)
-2 to -4.5 -2 to -4.5 -2 to -4.5 -2 to -4.5
ID (A)
-0.32 -0.5 -0.6 -0.6
FEATURES
D D D D D High-Side Switching Low On-Resistance: 1.5 W Moderate Threshold: -3.1 V Fast Switching Speed: 17 ns Low Input Capacitance: 60 pF
TO-226AA (TO-92)
1
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control
Dual-In-Line
D1 P S1 G1 1 2 3 4 5 6 7 14 D4 13 S4 12 G4 11 NC 10 G3 9 8 Top View Plastic: VQ2001J Sidebraze: VQ2001P S3 D3 P P
TO-92S (Copper Lead Frame)
S 1
S
G
2
G
2
NC G2
D
3
D
3
P
S2 D2
Top View VP0300L
Top View VP0300LS For device marking, see the last page of this data sheet.
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
VQ2001J/P Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS VGS ID IDM PD RthJA TJ, Tstg
VP0300L
-30 "20 -0.32 -0.2 -2.4 0.8 0.32 156
VP0300LS
-30 "20 -0.5 -0.32 -3 0.9 0.4 139 -55 to 150
Single
-30 "20 -0.6 -0.37 -2 1.3 0.52 96
Total Quad
-30 "20 -0.6 -0.37 -2 2 0.8 62.5
Unit
V
A
W _C/W _C
Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range
Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70217 S-04279--Rev. E, 16-Jul-01 www.vishay.com
11-1
VP0300L/LS, VQ2001J/P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VP0300L/LS VQ2001J/P
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
V(BR)DSS VGS(th)
VGS = 0 V, ID = -10 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "16 V
-55 -3.1
-30 -2 -4.5
-30 -2 -4.5 "100 "500 "100 -10 -500 -500 -10 mA nA V
Gate-Body Leakage
IGSS
TJ = 125_C VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
TJ = 125_C VDS = -30 V, VGS = 0 V
On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Common Source Output Conductanceb
ID(on) rDS(on) gfs gos
VDS = -10 V, VGS = -12 V VGS = -12 V, ID = -1 A TJ = 125_C VDS = -10 V, ID = -0.5 A VDS = -7.5 V, ID = -0.05 A
-2.8 1.5 2.6 370 0.25
-1.5 2.5 3.6
-1.5 2 3.6
A W
200
200
mS
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = -15 V, VGS = 0 V f = 1 MHz 60 40 10
150 100 60
150 100 60
pF
Switchingc
Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time tON tOFF tON tOFF VDD = -25 V, RL = 23 W ID ^ -1 A, VGEN = -10 V RG = 25 W VDD =-15 V, RL = 23 W ID ^ -0.6 A, VGEN = -10 V RG = 25 W 19 17 19 16 30 30 ns 30 30 VPEA03
Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70217 S-04279--Rev. E, 16-Jul-01
VP0300L/LS, VQ2001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
-2.0 VGS = -10 V -1.6 ID - Drain Current (A) -9 V -1000
Transfer Characteristics
125_C -8 V ID - Drain Current (mA) -800 TJ = -55_C 25_C
-1.2
-7 V
-600
-0.8
-6 V
-400
-0.4
-5 V -4 V
-200
0 0 -1 -2 -3 -4 -5 VDS - Drain-to-Source Voltage (V)
0 0 -2 -4 -6 -8 -10 VGS - Gate-to-Source Voltage (V)
Capacitance
175 150 125 100 75 50 25 0 0 -5 -10 -15 -20 -25 -30 VDS - Drain-to-Source Voltage (V) Crss Coss VGS = 0 V f = 1 MHz VGS - Gate-to-Source Voltage (V) -18
Gate Charge
-15 VDS = -15 V ID = -1 A VDS = -24 V ID = -1 A
C - Capacitance (pF)
-12
-9
Ciss
-6
-3
0 0 1000 2000 3000 4000 5000
Qg - Total Gate Charge (pC)
On-Resistance vs. Junction Temperature
1.65 -10 K
Source-Drain Diode Forward Voltage
TJ = 150_C -1 K TJ = 25_C IS - Source Current (A) 150
1.50 rDS(on) - On-Resistance ( ) (Normalized) VGS = -4.5 V ID = -0.5 A
1.35
1.20
VGS = -10 V ID = -0.1 A
-100
1.05
-10
0.90
0.75 -50
-1 -25 0 25 50 75 100 125 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V) www.vishay.com
Document Number: 70217 S-04279--Rev. E, 16-Jul-01
11-3
VP0300L/LS, VQ2001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Gate-to-Source Voltage
3.0 ID = -0.5 A rDS(on) - On-Resistance ( ) 2.5 ID - Drain Current (A) -1 K -10 K VDS = -10 V TJ = 150_C
Threshold Region
2.0
100_C -100
25_C
1.5
ID = -0.2 A
-10 -55_C
1.0
0 0 -4 -8 -12 -16 -20 VGS - Gate-to-Source Voltage (V)
-1 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
VGS - Gate-Source Voltage (V)
THERMAL RATINGS
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM
0.01 Single Pulse 0.01 0.1 1 10 100 t1 - Square Wave Pulse Duration (sec)
2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t)
1K
10 K
DEVICE MARKINGS
Front View:
VP0300L
"S" VP 0300L xxyy
Top View:
VQ2001J
VQ2001J "S"f//xxyy "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code
VP0300LS
"S" VP 0300LS xxyy
VP0300LS
VQ2001P "S"f//xxyy
www.vishay.com
11-4
Document Number: 70217 S-04279--Rev. E, 16-Jul-01

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